Details
Focus
This Application Session investigates the materials and manufacturing foundations of next-generation power semiconductors. We connect wide- and ultra-wide-bandgap material design with scalable epitaxial processing and physics-informed process engineering, examining how reaction chemistry, transport, thermal environments, and microstructural evolution determine material quality, reproducibility, and device readiness. Gallium oxide serves as a representative research platform, while the resulting methods are transferable to broader power-semiconductor materials and vapor-phase manufacturing technologies.
Methods
- Materials & Growth Mechanisms: Use first-principles calculations, thermodynamic analysis, and nucleation theory to reveal reaction pathways, parasitic growth, and defect-forming mechanisms in wide-bandgap semiconductor synthesis.
- Multiphysics Process Modeling: Couple fluid dynamics, heat transfer, and precursor transport from reactor to substrate scales to connect operating conditions with local growth environments, film formation, and spatial uniformity.
- Machine Learning Process Optimization: Combine predictive simulation, targeted epitaxial growth, advanced materials characterization, and surrogate modeling to validate mechanisms and identify robust process windows with reduced trial and error.
What we deliver
- Mechanism-Based Design Rules: Generalizable principles for coordinating reaction chemistry, mass transport, and thermal management to stabilize epitaxy and control power-semiconductor material quality.
- Uniform & Reproducible Materials: Transferable strategies for suppressing parasitic reactions and improving film uniformity, morphology, crystallinity, defect control, and process-to-process consistency.
- Scale-Up & Manufacturing Frameworks: Predictive process maps and optimization workflows for larger-area deposition, reactor redesign, and extension to related wide-bandgap materials and vapor-phase manufacturing platforms.
Related Papers
- Design of optimized halide vapor phase epitaxy (HVPE) conditions for uniform α-Ga2O3 growth based on CFD analysis (Journal of the Korean Ceramic Society, 2025)
- A pre-reaction suppressing strategy for α-Ga2O3 halide vapor pressure epitaxy using asymmetric precursor gas flow (CrystEngComm, 2022)